Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

Wet and Dry Etching Theory

Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si=SiGe resonant interband tunnel diodes

The effect and influence of dry plasma etching processes of Si=SiGe using HBr for the formation of diode mesa structures has been investigated to minimise sidewall leakage current. To characterise sidewall damage electrically, Si-based resonant interband tunnel diodes (RITD) were processed and the completed RITDs compared by their peak-to-valley current ratio (PVCR) and valley current density (...

Wet anisotropic etching of polyimide

With the aim of developing flexible biocompatible implants for in vivo studies of nerve regeneration [1], fabrication of passive polyimide membranes using the commercial available Kapton film (100HN and 50HN, from DuPont) was investigated. Polyimide has been widely used in microelectronics, and its application possibilities have been widening to other fields such as micromachining and biomedica...

Anisotropic Dry Etching ( RIE ) for Micro and Nanogap Fabrication

The main objective of this research is to develop a micro and nanogap structure using dry anisotropic etching –Reactive Ion EtchingRIE. Amorphous silicon material is used in the micro and nanogap structure and gold as electrode. The fabrication processes of the micro and nanostructure are based on conventional photolithography, wet etching for the Al pattern and wet etching for a-Si pattern usi...

Wet-Chemical Etching and Cleaning of Silicon

A Introduction Research and manufacturing related to silicon devices, circuits, and systems often relies on the wet-chemical etching of silicon wafers. The dissolution of silicon using liquid solutions is needed for deep etching and micromachining, shaping, and cleaning. Also, wet-chemistries are often used for defect delineation in single crystal silicon materials. In this paper, a review of t...